Product Description
GeBi2Te4æ¶ä½
| ææå称 Name |
GeBi2Te4
|
| æ§è´¨åç±» Electrical properties | ææç»ç¼ä½ï¼çº¢å¤ææ Topological Insulators |
| ç¦å¸¦å®½åº¦ Bangap | 0.837 eV |
| åææ¹æ³ Synthetic method | CVT |
| æ¶ä½ç»æ Crystal Structure | trigonal |
| å¥ç¦»é¾æç¨åº¦ Degree of difficulty for exfoliation |
æ?/p> Easy |
| æ´å¤ä¿¡æ¯ï¼?/span> | 请å¨è¯¢ï¼sales@6carbon.com |
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Shamoto, Shin-ichi, et al. "Structural study on optical recording materials Ge2Sb2+ xTe5 and GeBi2Te4." Physica B: Condensed Matter 385 (2006): 574-577.
Tichý, L., M. Frumar, and J. Klikorka. "Some electrical properties of GeBi2Te4 single crystals." physica status solidi (a) 56.1 (1979): 323-326.
Sterzi, A., et al. "Probing band parity inversion in the topological insulator GeBi2Te4 by linear dichroism in ARPES." Journal of Electron Spectroscopy and Related Phenomena 225 (2018): 23-27.
Collaboration: Authors and editors of the volumes III/17H-17I-41E. "PbSb2S4, GeSb2Te4, GeBi2Te4, SnBi2Te4 crystal structure, physical properties." Ternary Compounds, Organic Semiconductors (2000): 1-5.
Iwaya, Katsuya, et al. "STM Studies of ternary topological insulators GeBi2Te4 and SnBi2Te4." APS Meeting Abstracts. 2014.
Marcinkova, A., et al. "Topological metal behavior in GeBi 2 Te 4 single crystals." Physical Review B 88.16 (2013): 165128.
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