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  • AgInP2S6 crystal

    • AgInP2S6 crystal

    $389.00
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    Product Description

    AgInP2S6晶体

    材料名称

    Name

     

     

     

    AgInP2S6

     

    性质分类

    Electrical   properties

     

    半导体，非线性材料，铁电材料

    Semiconductorï¼?/span>Nonlinear Material，Ferroelectrics Material

    禁带宽度

    Bangap

    1.147 eV

    合成方法

    Synthetic   method

    CVT

    剥离难易程度

    Degree of difficulty for exfoliation

     

    �/span>

    Easy

    更多信息ï¼?/span>

    请咨询：sales@6carbon.com

     

    材料性质参考文献：

    1,   https://doi.org/10.1039/C7RA13519J

    Structural, electronic, vibration and elasticproperties of the layered AgInP2S6 semiconductingcrystal – DFT approach

     

    2,   https://aip.scitation.org/doi/10.1063/1.4962956

    Second-harmonic generation in quaternary atomically thin layered AgInP2S6 crystals

     

     

    实物照片

    AgInP2S6.png

     

     

    晶体结构

    AgInP2S6-1.png

     

    能带结构

    AgInP2S6-2.png

     

    晶体结构，能带结构参考网址ï¼?/p>

    https://www.materialsproject.org/materials/mp-22661/

     

     

    高定向结晶XRD

     

     

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    公司网址：http://www.6carbon.com

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