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HfS2 Crystal - Hafnium Disulfide

Crystal sizeï¼?/span> 5~10 mm Electrical propertiesï¼?/span> Semiconductor Purityï¼?/span> >99.999 % Characterized byï¼?/span> EDS，SEM，Raman Grown with: CVT method Contact for more information  sales@2d-material.com

HfS3 crystal

HfS3晶体   材料名称 Name HfS3 性质分类 Electrical   properties 拓扑绝缘ä½?/span> Topological Insulators 禁带宽度 Bangap 1.119 eV 合成方法 Synthetic   method CVT 剥离难易程度...

HfSe2 Crystal - Hafnium Diselenide

Crystal sizeï¼?/span> 5~10 mm Electrical propertiesï¼?/span> Semiconductor Purityï¼?/span> >99.999 % Characterized byï¼?/span> EDS，SEM，Raman Grown with: CVT method Contact for more information  sales@2d-material.com

HfTe2 Crystal

Crystal sizeï¼?/span> 5~10 mm Electrical propertiesï¼?/span> Semiconductor Purityï¼?/span> >99.999 % Characterized byï¼?/span> EDS，SEM，Raman Grown with: CVT method Contact for more information  sales@2d-material.com

HfTe5 Crystal

HgPSe3 crystal

HgPSe3晶体 材料名称 Name   HgPSe3   性质分类 Electrical   properties     拓扑绝缘ä½?/span> Topological Insulators 禁带宽度 Bangap 1.209 eV 合成方法 Synthetic   method ...

HOPG, Graphite

In2GaBi2S6 crystal

In2GaBi2S6晶体 材料名称 Name    In2GaBi2S6   性质分类 Electrical   properties   拓扑材料，半导体 禁带宽度 Bangap 1.8 eV 合成方法 Synthetic   method CVT ...

In2P3S9 crystal

In2P3S9晶体 材料名称 Name       In2P3S9   性质分类 Electrical   properties   半导ä½?/span> Semiconductor 禁带宽度 Bangap 1.4 eV 合成方法 Synthetic   method CVT ...

In2P3Se9 Crystal

In2Se3 Crystal

Crystal sizeï¼?/span> 5~10 mm Electrical propertiesï¼?/span> Semiconductor Purityï¼?/span> >99.999 % Characterized byï¼?/span> EDS，SEM，Raman Grown with: CVT method Contact for more information  sales@2d-material.com

In2Te5 crystal

In2Te5晶体 材料名称 Name   In2Te5   性质分类 Electrical   properties   拓扑材料+热电材料 禁带宽度 Bangap ~1 eV 合成方法 Synthetic   method CVT 剥离难易程度...