Product Description
GeS æ¶ä½
| ææåç§° Name | GeS |
| æ§è´¨åç±» Electrical properties | ææææï¼çº¢å¤ææ?/p>
|
| ç¦å¸¦å®½åº¦ Bangap | 1.2 eV |
| åææ¹æ³ Synthetic method | CVT |
| æ¶ä½ç»æ Crystal Structure | |
| å¥ç¦»é¾æç¨åº¦ Degree of difficulty for exfoliation | 容æ |
| æ´å¤ä¿¡æ¯ï¼?/span> | 请å¨è¯¢ï¼sales@6carbon.com |
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1, Madatov, R., A. Alekperov, and O. Hasanov. "Effect of Nd Impurity on Photoconductivity and Optical Absorption Spectra of GeS Single Crystal." Journal of Applied Spectroscopy 84.1 (2017).
2,Madatov, R., A. Alekperov, and O. Hasanov. "Effect of Nd Impurity on Photoconductivity and Optical Absorption Spectra of GeS Single Crystal." Journal of Applied Spectroscopy 84.1 (2017).
3,Zhang, Shengli, et al. "Two-dimensional GeS with tunable electronic properties via external electric field and strain." Nanotechnology 27.27 (2016): 274001.



