Product Description
GeBi4Te7æ¶ä½
| ææå称 Name | GeBi4Te7 |
| æ§è´¨åç±» Electrical properties | ææç»ç¼ä½?红å¤ææï¼ççµææï¼ç¸åææ Topological Insulators |
| ç¦å¸¦å®½åº¦ Bangap | 0.597 eV |
| åææ¹æ³ Synthetic method | CVT |
| æ¶ä½ç»æ Crystal Structure | trigonal |
| å¥ç¦»é¾æç¨åº¦ Degree of difficulty for exfoliation | æ?/span> Easy |
| æ´å¤ä¿¡æ¯ï¼?/span> | 请å¨è¯¢ï¼sales@6carbon.com |
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1ï¼?span>Kuznetsov, V. L., L. A. Kuznetsova, and D. M. Rowe. "Effect of nonstoichiometry on the thermoelectric properties of GeBi 4 Te 7." Journal of applied physics 85.6 (1999): 3207-3210.
2ï¼?span>Imai, Yoji, and Akio Watanabe. "Electronic structures of PbBi4Te7 and GeBi4Te7 calculated by a first-principle pseudopotential method." Intermetallics 11.5 (2003): 451-458.
3ï¼?span>Souchay, Daniel, et al. "Layered manganese bismuth tellurides with GeBi 4 Te 7-and GeBi 6 Te 10-type structures: towards multifunctional materials." Journal of Materials Chemistry C 7.32 (2019): 9939-9953.
4ï¼?nbsp;Shelimova, L. E., and M. A. Kretova. "Phase transformations in Ge 3 Bi 2 Te 6, GeBi 2 Te 4 and GeBi 4 Te 7 semiconductor compounds." Izvestiya Akademii Nauk-Rossijskaya Akademiya Nauk. Neorganicheskie Materialy 29.1 (1993): 54-58.
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