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  • GaGeTe crystal

    • GaGeTe crystal

    $389.00
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    Product Description

    GaGeTe晶体

    材料名称

    Name

     

     

    GaGeTe

     

    性质分类

    Electrical   properties

     

    拓扑绝缘体，半导体，红外材料，热电材料，

    TI，Semiconductor，IR

    禁带宽度

    Bangap

    0.2 eV

    合成方法

    Synthetic   method

    CVT

    剥离难易程度

    Degree of difficulty for exfoliation

     

    �/span>

    Easy

    保存注意事项

    Notice

    晶体稳定，不需要特殊保å­?/p> Stable

    更多信息ï¼?/span>

    请咨询：sales@6carbon.com

    参考文献：

    1ï¼?nbsp;Drasar, C., et al. "Thermoelectric properties and nonstoichiometry of GaGeTe." Journal of Solid State Chemistry 193 (2012): 42-46.

    2ï¼?nbsp;Wang, Weike, et al. "Ultrathin GaGeTe p-type transistors." Applied Physics Letters 111.20 (2017): 203504.

    3ï¼?span>Kucek, Vladimir, et al. "Optical and transport properties of GaGeTe single crystals." Journal of crystal growth 380 (2013): 72-77.

     

     

     

    实物照片

    GaGeTe-1.png

     

     

    晶体结构

    GaGeTe-2.png

     

     

     

    能带结构

    GaGeTe-3.png

     

     

     

    EDS定性测试元ç´?/p>

    GaGeTe-5.png

     

     

    研磨成粉体后测试XRD

    GaGeTe-4.png

     

    邮件ï¼?nbsp;sales@6carbon.com

    公司网址：http://www.6carbon.com

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