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  • CuInP2Se6 crystal

    • CuInP2Se6 crystal

    $389.00
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    Product Description

    CuInP2Se6晶体

    材料名称

    Name

     

     

    CuInP2Se6

     

    性质分类

    Electrical   properties

     

    拓扑材料，半导体，红外材料，铁磁性材æ–?/span>

    禁带宽度

    Bangap

    0.311 eV

    合成方法

    Synthetic   method

    CVT

    剥离难易程度

    Degree of difficulty for exfoliation

     

    �/span>

    Easy

    保存注意事项

    Notice

    晶体稳定，不需要特殊保å­?/p> Stable

    更多信息ï¼?/span>

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    参考文çŒ?

    1, Vysochanskii, Yu M., et al. "Dielectric measurement study of lamellar CuInP2Se6: successive transitions towards a ferroelectric state via an incommensurate phase?." Solid state communications 115.1 (2000): 13-17.

    2,Banys, J., et al. "Dielectric properties of ferroelectrics CuInP2Se6 and CuCrP2S6." Ferroelectrics 257.1 (2001): 163-168.

    3, Liubachko, V., et al. "Anisotropic thermal properties and ferroelectric phase transitions in layered CuInP2S6 and CuInP2Se6 crystals." Journal of Physics and Chemistry of Solids 111 (2017): 324-327.

     

    实物照片

     

    CuInP2Se6-1.png

     

    晶体结构

    CuInP2Se6-2.png

     

     

    能带结构

     

    CuInP2Se6-3.png

     

     

    EDS 定性测试元ç´?/p>

    CuInP2Se6-5.png

     

     

    研磨成粉体后测XRD

     

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